The NSF040120L3A0 from Nexperia is an N-Channel SiC MOSFET that is ideal for E-vehicle charging infrastructure, photovoltaic inverters, switch mode power supply, uninterruptible power supply (UPS), and motor drive applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.3 V, and a drain-source on-resistance of less than 60 milli-ohms. This MOSFET has a continuous drain current of up to 65 A and a power dissipation of less than 313 W. It is stable with variations in temperature and offers fast switching speed, making it suitable for high power and high voltage industrial applications. This MOSFET also consists of a very fast and robust intrinsic body diode. It is available in a through-hole package that measures 16.13 x 21.1 mm.