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NSF040120L3A0 Image

The NSF040120L3A0 from Nexperia is an N-Channel SiC MOSFET that is ideal for E-vehicle charging infrastructure, photovoltaic inverters, switch mode power supply, uninterruptible power supply (UPS), and motor drive applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.3 V, and a drain-source on-resistance of less than 60 milli-ohms. This MOSFET has a continuous drain current of up to 65 A and a power dissipation of less than 313 W. It is stable with variations in temperature and offers fast switching speed, making it suitable for high power and high voltage industrial applications. This MOSFET also consists of a very fast and robust intrinsic body diode. It is available in a through-hole package that measures 16.13 x 21.1 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    1200 V N-Channel SiC MOSFET for EV Charging Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    16.13 x 21.1 mm
  • Number of Channels
  • Continous Drain Current
    65 A
  • Drain Source Resistance
    60 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 22 V
  • Gate Source Threshold Voltage
    2.3 V
  • Gate Charge
    95 nC
  • Power Dissipation
    313 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Electric Vehicle, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    E-vehicle charging infrastructure, Photovoltaic inverters, Switch mode power supply, Uninterruptable power supply, Motor drives

Technical Documents