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The PMCB60XNE from Nexperia is an N-channel Enhancement Mode Trench Power MOSFET that is ideal for battery switches, high-speed line drivers, low-side load switches, and switching circuit applications. This MOSFET has a drain-source breakdown voltage of over 30 V, a gate-source threshold voltage of 0.8 V, and a drain-source on-resistance of 40 mΩ. It has a continuous drain current of up to 4.3 A and power dissipation of less than 480 mW.

The PMCB60XNE utilizes Nexperia’s Trench MOSFET technology and provides low threshold voltage in conjunction with a very fast switching operation. It is equipped with electrostatic discharge (ESD) protection to prevent electromagnetic interference from causing damage. This power MOSFET is available in a surface-mount package that measures 1 x 0.6 x 0.2 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    30 V N-Channel Trench Power MOSFET for Fast Switching Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    1.0 × 0.6 × 0.2 mm
  • Number of Channels
  • Continous Drain Current
    4.3 A
  • Drain Source Resistance
    40 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.8 V
  • Gate Charge
    5 nC
  • Power Dissipation
    0.48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
  • Package Type
    Surface Mount
  • Package
  • Applications
    Battery switch, High-speed line driver, Low-side load switch, Switching circuits

Technical Documents