The PMCB60XNE from Nexperia is an N-channel Enhancement Mode Trench Power MOSFET that is ideal for battery switches, high-speed line drivers, low-side load switches, and switching circuit applications. This MOSFET has a drain-source breakdown voltage of over 30 V, a gate-source threshold voltage of 0.8 V, and a drain-source on-resistance of 40 mΩ. It has a continuous drain current of up to 4.3 A and power dissipation of less than 480 mW.
The PMCB60XNE utilizes Nexperia’s Trench MOSFET technology and provides low threshold voltage in conjunction with a very fast switching operation. It is equipped with electrostatic discharge (ESD) protection to prevent electromagnetic interference from causing damage. This power MOSFET is available in a surface-mount package that measures 1 x 0.6 x 0.2 mm.