PMPB12R7EP

Note : Your request will be directed to Nexperia.

The PMPB12R7EP from Nexperia is a MOSFET with Continous Drain Current -12.3 to -5.5 A, Drain Source Resistance 12.7 to 25 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for PMPB12R7EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMPB12R7EP
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 33 to 49 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12.3 to -5.5 A
  • Drain Source Resistance
    12.7 to 25 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    33 to 49 nC
  • Power Dissipation
    1.9 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1220-2
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, computing power management

Technical Documents