PMXB65UPE

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PMXB65UPE Image

The PMXB65UPE from Nexperia is a MOSFET with Continous Drain Current -3.2 to -2.1 A, Drain Source Resistance 59 to 880 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for PMXB65UPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMXB65UPE
  • Manufacturer
    Nexperia
  • Description
    12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.2 to -2.1 A
  • Drain Source Resistance
    59 to 880 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    6.7 to 12 nC
  • Power Dissipation
    0.317 to 8.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1215
  • Applications
    High-side load switch and charging switch for portable devices, Power management in battery driven portables, LED driver, DC-to-DC converter

Technical Documents