The PSMN1R0-100ASF from Nexperia is an N-Channel Enhancement MOSFET that is ideal for battery protection, high-power full and half-bridge configurations, OR-ing, and BLDC motor control applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 0.99 milli-ohms. This power MOSFET has a continuous drain current of up to 460 A and a power dissipation of less than 1.55 kW. It is based on Nexperia's proprietary NextPower technology that leverages CCPAK1212 packaging design to ensure a low gate charge × drain-source on-resistance figure of merit (FOM), improve current conduction, and remove wire bonds to achieve a high-efficiency switching operation. 

This power MOSFET is 100 % tested for avalanche energy rating and has a low reverse recovery charge for increased efficiency and reduced voltage spiking. It is available in a surface-mount package that measures 12.15 x 12.15 x 2.75 mm.