The PSMN1R3-80SSF from Nexperia is an N-Channel Enhancement MOSFET that is ideal for synchronous rectifiers in AC/DC and DC/DC, primary side switch in DC/DC, BLDC motor control, battery protection, and full-bridge and half-bridge applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.2 milli-ohms. This power MOSFET has a continuous drain current of up to 335 A and a power dissipation of less than 341 W. It has low reverse recovery charge and figure of merit, making it suitable for high-efficiency switching applications. This RoHS-compliant power MOSFET is 100% avalanche-rated to cater to industrial and consumer applications. It is available in a surface-mount package that measures 8 x 8 x 1.6 mm.