PSMN3R0-30YLD

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PSMN3R0-30YLD Image

The PSMN3R0-30YLD from Nexperia is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 2.57 to 6.6 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PSMN3R0-30YLD can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN3R0-30YLD
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 14.5 to 46.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    2.57 to 6.6 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    14.5 to 46.4 nC
  • Power Dissipation
    91 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    On-board DC-DC solutions for server and telecommunications, Secondary-side synchronous rectification in telecommunication applications, Voltage regulator modules (VRM), Point-of-Load (POL) modules, Power delivery for V-core, ASIC, DDR, GPU, VGA and system

Technical Documents