PSMN6R4-30MLD

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PSMN6R4-30MLD Image

The PSMN6R4-30MLD from Nexperia is a MOSFET with Continous Drain Current 47 to 66 A, Drain Source Resistance 5.3 to 13.7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PSMN6R4-30MLD can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN6R4-30MLD
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 6.5 to 19 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    47 to 66 A
  • Drain Source Resistance
    5.3 to 13.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    6.5 to 19 nC
  • Power Dissipation
    51 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK33
  • Applications
    On-board DC-DC solutions for server and telecommunications, Secondary-side synchronous rectification in telecommunication applications, Voltage regulator modules (VRM), Point-of-Load (POL) modules, Power delivery for V-core, ASIC, DDR, GPU, VGA and system

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