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2N7000 Image

The 2N7000 from onsemi is an N-Channel Enhancement Mode Power MOSFET that is ideal for small servo motor control, power MOSFET gate drivers, and other switching applications. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltag

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    60 V N-Channel Enhancement Mode MOSFET for Low Current Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    5.20 x 20.95 mm
  • Number of Channels
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    5000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
  • Gate Charge
    2 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
    TO-92-3TO-92-3 LF
  • Applications
    Small Servo Motor Control, Power MOSFET Gate Drivers, Assorted Switching Applications

Technical Documents