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2N7000 Image

The 2N7000 from onsemi is an N-Channel Enhancement Mode Power MOSFET that is ideal for small servo motor control, power MOSFET gate drivers, and other switching applications. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of less than 5 Ω. This MOSFET has a continuous drain current of up to 280 mA and power dissipation of less than 300 mW. It is manufactured using onsemi’s proprietary, high cell density DMOS technology and is designed to provide rugged, reliable, and fast switching performance. 

The MOSFET acts as a voltage-controlled small signal switch with a high saturation current capability that is suited for low-voltage and low-current devices. It is available in a through-hole package that measures 5.20 x 20.95 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    60 V N-Channel Enhancement Mode MOSFET for Low Current Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    5.20 x 20.95 mm
  • Number of Channels
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    5000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
  • Gate Charge
    2 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
    TO-92-3TO-92-3 LF
  • Applications
    Small Servo Motor Control, Power MOSFET Gate Drivers, Assorted Switching Applications

Technical Documents