ATP304

Note : Your request will be directed to onsemi.

The ATP304 from onsemi is a MOSFET with Continous Drain Current -100 A, Drain Source Resistance 6.5 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.6 V. Tags: Surface Mount. More details for ATP304 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ATP304
  • Manufacturer
    onsemi
  • Description
    2.6 V P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -100 A
  • Drain Source Resistance
    6.5 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.6 V
  • Gate Charge
    250 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK (Single Gauge) / ATPAK
  • Applications
    Multi cells Li-ion battery protection

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