BUZ11

Note : Your request will be directed to onsemi.

The BUZ11 from onsemi is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 40 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 V. Tags: Through Hole. More details for BUZ11 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUZ11
  • Manufacturer
    onsemi
  • Description
    2 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    40 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 V
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3

Technical Documents

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