BVSS123L

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The BVSS123L from onsemi is a MOSFET with Continous Drain Current 0.17 A, Drain Source Resistance 6000 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.6 V. Tags: Surface Mount. More details for BVSS123L can be seen below.

Product Specifications

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Product Details

  • Part Number
    BVSS123L
  • Manufacturer
    onsemi
  • Description
    2.6 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.17 A
  • Drain Source Resistance
    6000 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.6 V
  • Power Dissipation
    0.225 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Infotainment applications

Technical Documents