ECH8660

Note : Your request will be directed to onsemi.

The ECH8660 from onsemi is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 45 to 155 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.6 V. Tags: Surface Mount. More details for ECH8660 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ECH8660
  • Manufacturer
    onsemi
  • Description
    2.6 V N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    45 to 155 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.6 V
  • Gate Charge
    10 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-28 FL / ECH-8

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.