ECH8690

Note : Your request will be directed to onsemi.

The ECH8690 from onsemi is a MOSFET with Continous Drain Current 4.7 A, Drain Source Resistance 55 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.6 V. Tags: Surface Mount. More details for ECH8690 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ECH8690
  • Manufacturer
    onsemi
  • Description
    2.6 V P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.7 A
  • Drain Source Resistance
    55 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.6 V
  • Gate Charge
    15 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-28 FL / ECH-8

Technical Documents

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