ECH8697R

Note : Your request will be directed to onsemi.

The ECH8697R from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 7.4 to 17.5 milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12.5 to 12.5 V, Gate Source Threshold Voltage 1.3 V. Tags: Surface Mount. More details for ECH8697R can be seen below.

Product Specifications

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Product Details

  • Part Number
    ECH8697R
  • Manufacturer
    onsemi
  • Description
    1.3 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    7.4 to 17.5 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12.5 to 12.5 V
  • Gate Source Threshold Voltage
    1.3 V
  • Gate Charge
    6 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-28 FL / ECH-8

Technical Documents

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