EFC2J022NUZ

Note : Your request will be directed to onsemi.

The EFC2J022NUZ from onsemi is a MOSFET with Continous Drain Current 17 A, Drain Source Resistance 3 to 9 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 1.3V V. Tags: Wafer, Chip. More details for EFC2J022NUZ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    EFC2J022NUZ
  • Manufacturer
    onsemi
  • Description
    1.3V V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    17 A
  • Drain Source Resistance
    3 to 9 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    1.3V V
  • Gate Charge
    37 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Wafer, Chip
  • Package
    WLCSP-10
  • Applications
    1-Cell Lithium-ion Battery Charging and Discharging Switch

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.