EFC4C002NL

Note : Your request will be directed to onsemi.

The EFC4C002NL from onsemi is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 1.5 to 5.1 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 V. Tags: Wafer, Chip. More details for EFC4C002NL can be seen below.

Product Specifications

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Product Details

  • Part Number
    EFC4C002NL
  • Manufacturer
    onsemi
  • Description
    2.2 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    1.5 to 5.1 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 V
  • Gate Charge
    45 nC
  • Power Dissipation
    2.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Wafer, Chip
  • Package
    WLCSP-8
  • Applications
    3-Cells Lithium-ion Battery Charging and Discharging Switch

Technical Documents

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