EFC6605R

Note : Your request will be directed to onsemi.

The EFC6605R from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 8.8 to 17.4 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1.3 V. Tags: Surface Mount. More details for EFC6605R can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    EFC6605R
  • Manufacturer
    onsemi
  • Description
    1.3 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    8.8 to 17.4 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1.3 V
  • Gate Charge
    19.8 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    XFLGA-6
  • Applications
    Lithium-ion Battery Charging and Discharging Switch

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.