FCB260N65S3

Note : Your request will be directed to onsemi.

The FCB260N65S3 from onsemi is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 260 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FCB260N65S3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCB260N65S3
  • Manufacturer
    onsemi
  • Description
    4.5 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    260 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    24 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 / TO-263-2
  • Applications
    Telecom / Server Power Supplies, Industrial Power Supplies, UPS / Solar

Technical Documents

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