FCB260N65S3

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The FCB260N65S3 from onsemi is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 260 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FCB260N65S3 can be seen below.

Product Specifications

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Product Details

Part Number
FCB260N65S3
Manufacturer
onsemi
Description
4.5 V N-Channel MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

12 A
Drain Source Resistance

260 milliohm
Drain Source Breakdown Voltage

650 V
Gate Source Voltage

-30 to 30 V
Gate Source Threshold Voltage

4.5 V
Gate Charge

24 nC
Power Dissipation

90 W
Temperature operating range

-55 to 150 Degree C
Industry

Commercial, Industrial
RoHS Compliant

Yes
Package Type

Surface Mount
Package

D2PAK-3 / TO-263-2
Applications

Telecom / Server Power Supplies, Industrial Power Supplies, UPS / Solar