FCD4N60

Note : Your request will be directed to onsemi.

The FCD4N60 from onsemi is a MOSFET with Continous Drain Current 3.9 A, Drain Source Resistance 1200 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FCD4N60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCD4N60
  • Manufacturer
    onsemi
  • Description
    5 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 A
  • Drain Source Resistance
    1200 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    16.6 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    Lighting, AC-DC Power Supply, Solar Inverter

Technical Documents

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