FCH25N60N

Note : Your request will be directed to onsemi.

The FCH25N60N from onsemi is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 126 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 4 V. Tags: Through Hole. More details for FCH25N60N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCH25N60N
  • Manufacturer
    onsemi
  • Description
    4 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    126 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    57 to 74 nC
  • Power Dissipation
    216 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Solar Inverter, AC-DC Power Supply

Technical Documents

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