FCP260N60E

Note : Your request will be directed to onsemi.

The FCP260N60E from onsemi is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 260 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 V. Tags: Through Hole. More details for FCP260N60E can be seen below.

Product Specifications

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Product Details

Part Number
FCP260N60E
Manufacturer
onsemi
Description
3.5 V, N-Channel MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

15 A
Drain Source Resistance

260 milliohm
Drain Source Breakdown Voltage

600 V
Gate Source Voltage

-30 to 30 V
Gate Source Threshold Voltage

3.5 V
Gate Charge

48 to 62 nC
Power Dissipation

156 W
Temperature operating range

-55 to 150 Degree C
Industry

Commercial, Industrial
RoHS Compliant

Yes
Package Type

Through Hole
Package

TO-220
Applications

LCD / LED / PDP TV, Lighting, Solar Inverter, Telecom, AC-DC Power Supply