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The FCPF190N60E-F154 from onsemi is a MOSFET with Continous Drain Current 20.6 A, Drain Source Resistance 190 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3.5 V. Tags: Through Hole. More details for FCPF190N60E-F154 can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    600 V, N-Channel MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    20.6 A
  • Drain Source Resistance
    190 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3.5 V
  • Gate Charge
    63 to 82 nC
  • Power Dissipation
    39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Computing / Display Power Supplies, Telecom / Server Power Supplies, Industrial Power Supplies, Lighting / Charger / Adapter

Technical Documents

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