FDB0190N807L

Note : Your request will be directed to onsemi.

The FDB0190N807L from onsemi is a MOSFET with Continous Drain Current 270 A, Drain Source Resistance 1.7 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDB0190N807L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDB0190N807L
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    270 A
  • Drain Source Resistance
    1.7 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    178 to 249 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Industrial Motor Drive, Industrial Power Supplies, Industrial Automation, Battery Protection, Uninterruptible Power Supplies, Energy Inverters, Energy Storage, Load Switch

Technical Documents