FDB070AN06_F085

Note : Your request will be directed to onsemi.

The FDB070AN06_F085 from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 7 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDB070AN06_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB070AN06_F085
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    7 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    51 to 66 nC
  • Power Dissipation
    175 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Motor / Body Load Control, ABS Systems, Pow ertrain Management, Injection System, DC-DC converters and Off-line UPS, Distributed Pow er Architectures and VRMs, Primary Sw itch for 12V and 24V systems

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