FDB088N08

Note : Your request will be directed to onsemi.

The FDB088N08 from onsemi is a MOSFET with Continous Drain Current 85 A, Drain Source Resistance 8.8 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDB088N08 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB088N08
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    85 A
  • Drain Source Resistance
    8.8 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    91 to 118 nC
  • Power Dissipation
    160 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies, Micro Solar Inverter

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