Note : Your request will be directed to onsemi.

The FDB150N10 from onsemi is a MOSFET with Continous Drain Current 57 A, Drain Source Resistance 15 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FDB150N10 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    100 V, N-Channel MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    57 A
  • Drain Source Resistance
    15 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    53 to 69 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies, Micro Solar Inverter

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.