FDB2614

Note : Your request will be directed to onsemi.

The FDB2614 from onsemi is a MOSFET with Continous Drain Current 62 A, Drain Source Resistance 27 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FDB2614 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB2614
  • Manufacturer
    onsemi
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    62 A
  • Drain Source Resistance
    27 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    76 to 99 nC
  • Power Dissipation
    260 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Synchronous Rectification, Battery Protection Circuit, Motor Drives and Uninterruptible

Technical Documents