FDB42AN15A0-F085

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The FDB42AN15A0-F085 from onsemi is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 36 to 104 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FDB42AN15A0-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB42AN15A0-F085
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    36 to 104 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    30 to 36 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-263
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, ? Integrated Starter/alternator, Primary Switch for 12V Systems

Technical Documents