FDBL86062_F085

Note : Your request will be directed to onsemi.

The FDBL86062_F085 from onsemi is a MOSFET with Continous Drain Current 300 A, Drain Source Resistance 4.3 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FDBL86062_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDBL86062_F085
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    300 A
  • Drain Source Resistance
    4.3 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    95 to 124 nC
  • Power Dissipation
    429 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Electronic Steering, Integrated Starter / Alternator, Distributed Power Architectures and VRMs, Primary Switch for 12V Systems

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