FDC3601N

Note : Your request will be directed to onsemi.

The FDC3601N from onsemi is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 500 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDC3601N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDC3601N
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    500 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    3.7 to 5 nC
  • Power Dissipation
    0.96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT-23-6
  • Applications
    Load switch, Battery protection, Power management

Technical Documents

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