FDC6306P

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The FDC6306P from onsemi is a MOSFET with Continous Drain Current -1.9 A, Drain Source Resistance 0.127 to 0.250 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 V. Tags: Surface Mount. More details for FDC6306P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDC6306P
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1.9 A
  • Drain Source Resistance
    0.127 to 0.250 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    3 to 4.2 nC
  • Power Dissipation
    0.96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT-23-6
  • Applications
    Load switch, Battery protection, Power management

Technical Documents