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The FDC640P from onsemi is a MOSFET with Continous Drain Current -4.5 A, Drain Source Resistance 0.039 to 0.080 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 V. Tags: Surface Mount. More details for FDC640P can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    -20 V, P-Channel MOSFET


  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -4.5 A
  • Drain Source Resistance
    0.039 to 0.080 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    9 to 13 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Load switch, Battery protection, Power management

Technical Documents

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