FDD10N20LZ

Note : Your request will be directed to onsemi.

The FDD10N20LZ from onsemi is a MOSFET with Continous Drain Current 7.6 A, Drain Source Resistance 360 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDD10N20LZ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDD10N20LZ
  • Manufacturer
    onsemi
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.6 A
  • Drain Source Resistance
    360 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    12 to 16 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC/DC Converter, UPS, AC-DC Converter

Technical Documents