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The FDD13AN06_F085 from onsemi is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 13.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDD13AN06_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    60 V, N-Channel MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    13.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    22 to 29 nC
  • Power Dissipation
    115 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    Motor / Body Load Control, ABS Systems, Powertrain Management, Injection Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 12V and 24V systems

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