FDD2582

Note : Your request will be directed to onsemi.

The FDD2582 from onsemi is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 66 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDD2582 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD2582
  • Manufacturer
    onsemi
  • Description
    150 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    66 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    19 to 25 nC
  • Power Dissipation
    95 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC/DC Converters and Off-Line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24 V and 48 V Systems, High Voltage Synchronous Rectifier, Direct Injection / Diesel Injection Systems, Automotive Load Control, Electronic Valve Train System

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