FDD3510H

Note : Your request will be directed to onsemi.

The FDD3510H from onsemi is a MOSFET with Continous Drain Current -9.4 to 13.9 A, Drain Source Resistance 80 to 190 milliohm, Drain Source Breakdown Voltage -80 to 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.3 V. Tags: Surface Mount. More details for FDD3510H can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD3510H
  • Manufacturer
    onsemi
  • Description
    -80 to 80 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -9.4 to 13.9 A
  • Drain Source Resistance
    80 to 190 milliohm
  • Drain Source Breakdown Voltage
    -80 to 80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.3 V
  • Gate Charge
    13 to 20 nC
  • Power Dissipation
    32 to 35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-5
  • Applications
    Inverter, H-Bridge

Technical Documents

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