FDD3N40

Note : Your request will be directed to onsemi.

The FDD3N40 from onsemi is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 3400 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FDD3N40 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDD3N40
  • Manufacturer
    onsemi
  • Description
    400 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    3400 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    4.5 to 6 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    LED TV, Consumer Appliances, Uninterruptible Power Supply

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.