FDD5614P

Note : Your request will be directed to onsemi.

The FDD5614P from onsemi is a MOSFET with Continous Drain Current -15 A, Drain Source Resistance 100 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 V. Tags: Surface Mount. More details for FDD5614P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDD5614P
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -15 A
  • Drain Source Resistance
    100 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 V
  • Gate Charge
    15 to 24 nC
  • Power Dissipation
    42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC/DC Converter, Power Management, Load Switch

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.