FDD86567_F085

Note : Your request will be directed to onsemi.

The FDD86567_F085 from onsemi is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 3.2 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDD86567_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD86567_F085
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    3.2 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    63 to 82 nC
  • Power Dissipation
    227 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    Automotive Engine Control, PowerTrain Management, Solenoid and Motor Drivers, Integrated Starter/Alternator, Primary Switch for 12 V Systems

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