FDG6301N

Note : Your request will be directed to onsemi.

The FDG6301N from onsemi is a MOSFET with Continous Drain Current 0.22 A, Drain Source Resistance 2.6 to 5 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 1.5 V. Tags: Surface Mount. More details for FDG6301N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDG6301N
  • Manufacturer
    onsemi
  • Description
    25 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.22 A
  • Drain Source Resistance
    2.6 to 5 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    0.29 to 4 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88-6 / SC-70-6 / SOT-363-6

Technical Documents

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