FDG6322C

Note : Your request will be directed to onsemi.

The FDG6322C from onsemi is a MOSFET with Continous Drain Current -0.41 to 0.22 A, Drain Source Resistance 850 to 5000 milliohm, Drain Source Breakdown Voltage -25 to 25 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for FDG6322C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDG6322C
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.41 to 0.22 A
  • Drain Source Resistance
    850 to 5000 milliohm
  • Drain Source Breakdown Voltage
    -25 to 25 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    0.29 to 1.5 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88-6 / SC-70-6 / SOT-363-6

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.