FDG6335N

Note : Your request will be directed to onsemi.

The FDG6335N from onsemi is a MOSFET with Continous Drain Current 0.7 A, Drain Source Resistance 180 to 442 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.5 V. Tags: Surface Mount. More details for FDG6335N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDG6335N
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.7 A
  • Drain Source Resistance
    180 to 442 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    1.1 to 1.4 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88-6 / SC-70-6 / SOT-363-6
  • Applications
    DC/DC Converter, Power Management, Loadswitch

Technical Documents

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