Note : Your request will be directed to onsemi.

The FDH047AN08A0 from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 4.7 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 V. Tags: Through Hole. More details for FDH047AN08A0 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    -20 to 20 V, N-Channel MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    4.7 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 V
  • Gate Charge
    92 to 138 nC
  • Power Dissipation
    310 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.