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The FDH055N15A from onsemi is a MOSFET with Continous Drain Current 167 A, Drain Source Resistance 5.9 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 4 V. Tags: Through Hole. More details for FDH055N15A can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    -30 to 30 V, N-Channel MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    167 A
  • Drain Source Resistance
    5.9 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    92 nC
  • Power Dissipation
    429 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Synchronous Rectification for ATX / Sever / Telecom PSU, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies, Micro Solar Inverter

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