FDMA291P

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The FDMA291P from onsemi is a MOSFET with Continous Drain Current -6.6 A, Drain Source Resistance 36 to 98 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 V. Tags: Surface Mount. More details for FDMA291P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMA291P
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.6 A
  • Drain Source Resistance
    36 to 98 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 V
  • Gate Charge
    10 to 14 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6

Technical Documents