FDMA410NZT

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The FDMA410NZT from onsemi is a MOSFET with Continous Drain Current 9.5 A, Drain Source Resistance 23 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 1 V. Tags: Surface Mount. More details for FDMA410NZT can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMA410NZT
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.5 A
  • Drain Source Resistance
    23 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    1 V
  • Gate Charge
    10 to 14 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    Li-Ion Battery pack, Baseband switch, Load switch, DC-DC Conversion, Mobile Device Switching

Technical Documents