Note : Your request will be directed to onsemi.

The FDMA86265P from onsemi is a MOSFET with Continous Drain Current -1 A, Drain Source Resistance 1200 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 V. Tags: Surface Mount. More details for FDMA86265P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    -25 to 25 V, P-Channel MOSFET


  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -1 A
  • Drain Source Resistance
    1200 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 V
  • Gate Charge
    2.8 to 4 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Active Clamp Switch, Load Switch

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.