FDMC008N08C

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The FDMC008N08C from onsemi is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 7.8 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMC008N08C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC008N08C
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    7.8 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    13 to 29 nC
  • Power Dissipation
    57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Primary DC-DC MOSFET, Synchronous Rectifier in DC-DC and AC-DC, Motor Drive, Solar

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