FDMC4435BZ

Note : Your request will be directed to onsemi.

The FDMC4435BZ from onsemi is a MOSFET with Continous Drain Current -8.5 to -18 A, Drain Source Resistance 14 to 37 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage 25 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for FDMC4435BZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC4435BZ
  • Manufacturer
    onsemi
  • Description
    25 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8.5 to -18 A
  • Drain Source Resistance
    14 to 37 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    25 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    38 to 53 nC
  • Power Dissipation
    2.3 to 31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MLP
  • Applications
    High side in DC - DC Buck Converters, Notebook battery power management, Load switch in Notebook

Technical Documents

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